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TrenchStop Series
IKP04N60T q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
* * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Drives Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600 V IC 4A VCE(sat),Tj=25C 1.5 V Tj,max 175 C Marking Code K04T60 Package TO-220
C
G
E
P-TO-220-3-1 (TO-220AB)
* * * * *
Type IKP04N60T
Ordering Code Q67040S4714
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
1)
Symbol VCE IC
Value 600 8 4
Unit V A
ICpuls IF
12 12 4 8
IFpuls VGE tSC Ptot Tj Tstg -
12 20 5 42 -40...+175 -55...+175 260 V s W C
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 Dec-04
Power Semiconductors
TrenchStop Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA VCE(sat) V G E = 15V, I C = 4A T j = 25 C T j = 17 5 C Diode forward voltage VF V G E = 0V, I F = 4A T j = 25 C T j = 17 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 60A,V C E =V G E V C E = 600V , V G E = 0V T j = 25 C T j = 17 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V,t S C 5s V C C = 400V, T j 150 C Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 4A V G E = 1 5V T O -220-3- 1 IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 4A 4.1 600 Symbol Conditions RthJA TO-220-3-1 RthJCD TO-220-3-1 RthJC TO-220-3-1 Symbol Conditions
IKP04N60T q
Max. Value 3.5 5 62 Unit K/W
Value min. Typ. 1.5 1.9 1.65 1.6 4.9 max. 2.05 2.05 5.7
Unit
V
A 2.2 40 1000 100 nA S
252 20 7.5 27 7 36
-
pF
nC nH A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.2 Dec-04
Power Semiconductors
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 25 C, V R = 4 00V, I F = 4A, di F / dt = 61 0A / s td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 4A , V G E = 0/ 1 5V , R G = 47 , L 1 ) = 150nH, C 1 ) =47pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IKP04N60T q
Value min. Typ. 14 7 164 43 61 84 145 28 79 5.3 346 max. ns nC A A/s J Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 17 5 C V R = 4 00V, I F = 4A, di F / dt = 61 0A / s 95 291 6.6 253 ns nC A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 17 5 C, V C C = 4 00V, I C = 4A , V G E = 0/ 1 5V , R G = 47 L 1 ) = 150nH, C 1 ) =47pF Energy losses include "tail" and diode reverse recovery. 14 10 185 83 99 97 196 J ns Symbol Conditions Value min. Typ. max. Unit
1)
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.2 Dec-04
Power Semiconductors
TrenchStop Series
IKP04N60T q
tp=2s
12A 10A T C =80C 8A T C =110C 6A 4A 2A 0A 10H z
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10s
1A 50s
Ic
Ic
100H z 1kH z 10kH z 100kH z
0.1A
DC 10V 100V
1ms 10ms 1000V
1V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 47)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
40W
8A
IC, COLLECTOR CURRENT
POWER DISSIPATION
30W
6A
20W
4A
Ptot,
10W
2A
0W 25C
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.2 Dec-04
TrenchStop Series
IKP04N60T q
10A
10A
IC, COLLECTOR CURRENT
15V 6A 13V 11V 9V 4A 7V
IC, COLLECTOR CURRENT
8A
V GE =20V
8A
V GE =20V 15V
6A
13V 11V 9V
4A
7V
2A
2A
0A 0V 1V 2V 3V
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
8A
2.5V
IC =8A
IC, COLLECTOR CURRENT
2.0V
6A
1.5V
IC =4A IC =2A
4A
1.0V
2A
T J = 1 7 5 C 2 5 C
0.5V
0A
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.2 Dec-04
TrenchStop Series
IKP04N60T q
t d(off)
t d(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
tf t d(on) 10ns
100ns tf
t d(on)
tr 1ns 0A 2A 4A 6A
10ns tr
50 100 150 200 250
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 47, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E)
7V
t d(off) 100ns
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t, SWITCHING TIMES
tf
t d(on)
10ns
tr
25C
50C
75C
100C 125C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, RG=47, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 60 A)
Power Semiconductors
6
Rev. 2.2 Dec-04
TrenchStop Series
IKP04N60T q
E ts*
*) E on a nd E ts in clu d e los s e s d ue to diode re co ve ry
*) E on and E ts include losses due to diode recovery 0.4 mJ
E, SWITCHING ENERGY LOSSES
0.3m J E off 0.2m J
E, SWITCHING ENERGY LOSSES
E ts *
0.3 mJ
E off
0.2 mJ E on* 0.1 mJ
E on * 0.1m J
0.0m J 0A
2A
4A
6A
0.0 mJ
25 50
100
150
200
250
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 47, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E)
*) E on and E ts include losses 175J due to diode recovery
*) E on and E ts include losses
E, SWITCHING ENERGY LOSSES
150J 125J 100J E off 75J 50J 25J 0J 25C E on* E ts *
E, SWITCHING ENERGY LOSSES
0.25m J
due to diode recovery
0.20m J E ts *
0.15m J
0.10m J E off
0.05m J
E on *
50C
75C 100C 125C 150C
0.00m J 300V
350V
400V
450V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, RG = 47, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 4A, RG = 47, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.2 Dec-04
TrenchStop Series
IKP04N60T q
C iss
VGE, GATE-EMITTER VOLTAGE
1 5V
1 20V
c, CAPACITANCE
4 80V 1 0V
100pF
C oss 10pF C rss
5V
0V 0nC
5 nC
10n C 1 5nC 20 nC 25 nC 3 0nC
0V
10V 20V 30V 40V 50V 60V 70V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=4 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
SHORT CIRCUIT WITHSTAND TIME
60A 50A 40A 30A 20A 10A 0A 12V
10s 8s 6s 4s 2s 0s 10V
tSC,
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.2 Dec-04
TrenchStop Series
IKP04N60T q
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
0
0.2 0.1
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
R,(K/W) 0.38216 0.68326 1.49884 0.93550
, (s) -2 5.16*10 -3 7.818*10 -4 9*10 -4 1.134*10
R2
10 K/W
0
0.2 0.1 0.05
0.05 10 K/W
-1
R1
R,(K/W) 0.29183 0.79081 1.86970 2.04756
R1
, (s) -2 7.018*10 -2 1.114*10 -3 1.236*10 -4 2.101*10
R2
6
0.02 0.01
C1= 1/R1
C2=2/R2
single pulse
10 K/W
-1
0.02 0.01
C1= 1/R1
C2= 2/R2
single pulse 1s 10s 100s 1ms 10ms 100ms
1s
10s
100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
280ns
0.35C
T J =175C
trr, REVERSE RECOVERY TIME
240ns 200ns 160ns 120ns 80ns 40ns 0ns 400A/s 600A/s
Qrr, REVERSE RECOVERY CHARGE
0.30C 0.25C 0.20C 0.15C 0.10C 0.05C 0.00C 400A/s 600A/s
TJ=175C
T J =25C
TJ=25C
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=4A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 4A, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.2 Dec-04
TrenchStop Series
IKP04N60T q
T J=175C
10A
REVERSE RECOVERY CURRENT
T J =175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
-300A/s
8A
6A
-200A/s
T J=25C
4A
T J =25C
-100A/s
Irr,
2A
0A
0A/s
400A/s
600A/s
400A/s
600A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 4A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=4A, Dynamic test circuit in Figure E)
10A
2.0V
I F =8A
8A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V
4A
6A T J =25C 175C 2A
1.0V
2A
4A
0.5V
0A
0V
1V
2V
0.0V 0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
10
Rev. 2.2 Dec-04
TrenchStop Series
IKP04N60T q
Dimensions
TO-220AB
symbol
[mm] min max 10.30 15.95 0.86 3.7 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1457 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
Power Semiconductors
11
Rev. 2.2 Dec-04
TrenchStop Series
i,v diF /dt
IKP04N60T q
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH and Stray capacity C =40pF.
Power Semiconductors
12
Rev. 2.2 Dec-04
TrenchStop Series
IKP04N60T q
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.2 Dec-04

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